金士顿窄板颗粒标号不一，用什么颗粒，外频320超4G,内存800需改768

E5200,5电容,
DDR2 800金士顿2G单条马来亚窄板
主板:微星P43 Neo-F超频

BIOS中设1.3475V，外频320MHz×12.5=4000MHz,
E5200 4G硬盘灯常亮无法进入XP，系统蓝条定住不动
320外频超4G内存从800改768，可以运行SUPER PI
这是不是内存需要设置时序的问题，
超不上去设时序有没有用，
设置内存时序不当设置过高，会不会造成内存损坏
内存电压AUTO设置，微星DualCoreCenter观察内存1.93V，内存2.03V
双面对成16颗内存颗粒，产地MALY马来亚，BMMK1610970，KVR800D2N6/2G
金士顿窄板用的是什么颗粒，有标贴盖着看不全，颗粒标号不一致相差多不多，属正常现象？
C14554.02
0850PTIC
D1288TPGCGL25U
AFF675000B

C12530.02
ICA249000A

C14507.02
C14347.02

ICA212000A

AFF960000B

@ 400 MHz 6-6-6-18  (CL-RCD-RP-RAS) / 24-51-3-6-3-3  (RC-RFC-RRD-WR-WTR-RTP)
刷新周期 简化 (7.8 us), Self-Refresh
Command Rate (CR) 2T
模块名称 Kingston 99U5429-007.A00LF
序列号 8ECC5214h (340970638)
制造日期 第2周 / 2009
模块容量 2 GB (2 ranks, 8 banks)
模块位宽 64 bit
模块电压 SSTL 1.8

内存计时 
CAS Latency (CL) 6T
RAS To CAS Delay (tRCD) 6T
RAS Precharge (tRP) 6T
RAS Active Time (tRAS) 18T
Row Refresh Cycle Time (tRFC) 52T
Command Rate (CR) 2T
RAS To RAS Delay (tRRD) 3T
Write Recovery Time (tWR) 15T
Read To Read Delay (tRTR) Same Rank: 4T, Different Rank: 6T
Read To Write Delay (tRTW) 8T
Write To Read Delay (tWTR) Same Rank: 12T, Different Rank: 5T
Write To Write Delay (tWTW) Same Rank: 4T, Different Rank: 6T
Read To Precharge Delay (tRTP) 5T
Write To Precharge Delay (tWTP) 15T
Precharge To Precharge Delay (tPTP) 1T
Refresh Period (tREF) 3120T
DRAM Read ODT 3T
DRAM Write ODT 6T
MCH Read ODT 11T
Performance Level 4
Read Delay Phase Adjust Neutral
DIMM1 Clock Fine Delay 10T